AT26DF161A-MU【PDF 1/41 页】IC FLASH 16MBIT 70MHZ 8QFN

收藏本站

您好，
买卖IC网欢迎您。
请登录
免费注册

买卖IC网

Sheet目录312

[1页]2页 3页 4页 5页

Features

? Single 2.7V - 3.6V Supply

? Serial Peripheral Interface (SPI) Compatible

– Supports SPI Modes 0 and 3

? 70 MHz Maximum Clock Frequency

? Flexible, Uniform Erase Architecture

– 4-Kbyte Blocks

– 32-Kbyte Blocks

– 64-Kbyte Blocks

– Full Chip Erase

16-megabit

Individual Sector Protection with Global Protect/Unprotect Feature

– Thirty-two 64-Kbyte Physical Sectors

Hardware Controlled Locking of Protected Sectors

Flexible Programming Options

– Byte/Page Program (1 to 256 Bytes)

– Sequential Program Mode Capability

Automatic Checking and Reporting of Erase/Program Failures

JEDEC Standard Manufacturer and Device ID Read Methodology

Low Power Dissipation

– 5 mA Active Read Current (Typical)

– 10 μA Deep Power-down Current (Typical)

Endurance: 100,000 Program/Erase Cycles

Data Retention: 20 Years

Complies with Full Industrial Temperature Range

Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options

– 8-lead SOIC (150-mil and 208-mil wide)

– 8-pad MLF (6 x 5 x 1.00 mm)

2.7-volt Only

Serial Firmware

DataFlash ?

Memory

AT26DF161A

For New

Designs Use

AT25DF161

1. Description

The AT26DF161A is a serial interface Flash memory device designed for use in a

wide variety of high-volume consumer-based applications in which program code is

shadowed from Flash memory into embedded or external RAM for execution. The

flexible erase architecture of the AT26DF161A, with its erase granularity as small as

4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional

data storage EEPROM devices.

The physical sectoring and the erase block sizes of the AT26DF161A have been opti-

mized to meet the needs of today’s code and data storage applications. By optimizing

the size of the physical sectors and erase blocks, the memory space can be used

much more efficiently. Because certain code modules and data storage segments

must reside by themselves in their own protected sectors, the wasted and unused

memory space that occurs with large sectored and large block erase Flash memory

devices can be greatly reduced. This increased memory space efficiency allows addi-

tional code routines and data storage segments to be added while still maintaining the

same overall device density.

3640D–DFLASH–8/09

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

采购需求

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

我的联系方式